The team comprises with experts from various technical backgrounds covering material engineering, epitaxy growth, device process, characterization, and circuit design with high-frequency packaging. Other than outstanding academic achievements, most of the key personnel have extensive practical experience from industry. With such practical experience, the technical team will be able to combine individual talents with the competitive edge of Taiwan’s semiconductor industry to create next generation GaN-related industry.
Edward Yi Chang, Chairman and the leader of the team, got his PhD degree from U of Minnesota in USA in the area of Material Science Engineering. His main expertise falls in the categories of III-V related device technologies including power, high-frequency, and high-speed applications. Dr. Chang started his research in III-V related fields from 1985 when he started his career in Unisys. Till now, he has more than 30 year experience dedicated in compound semiconductor industry.
Our team emphasizes the development of GaN HEMT for high power applications at high frequencies toward millimeter wave range. With the evolution of the next generation communication systems beyond 4G, replacement of the current LDMOS technology has been an important issue in view of the limited power output performance at high frequencies. High power density GaN-based technology has become the mainstream technology to solve for the limited power delivered from existing semiconductor technologies at millimeter wave frequencies. Currently, the main challenge in delivering enough power at frequencies above X-band for GaN-based device technology lies in the process of gate length scaling. Thus, it is our target to address such area of applications where a balanced performance between high frequency and high breakdown voltage is desired.